光探测
材料科学
纳米晶
响应度
光电子学
异质结
纳米技术
光电探测器
作者
Hongbin Xiao,Jintao Fu,Xingzhan Wei,Baiqian Wang,Qingkai Qian,Jianfeng Huang,Ru Li,Zhigang Zang
标识
DOI:10.1002/lpor.202200276
摘要
Abstract The severe recombination of carriers and poor stability against moisture environment have limited the application of CsPbX 3 (X = Cl, Br, I) nanocrystals in photodetection. Herein, a large‐scale synthesis of SnO 2 ‐coated CsPbBr 3 NCs (abbreviated to CsPbBr 3 @SnO 2 NCs) has been reported for the first time by combining the water‐triggered transformation of Cs 4 PbBr 6 NCs and the hydrolysis of tin 2‐ethylhexanoate. Owing to the construction of the CsPbBr 3 /SnO 2 heterojunction, the recombination rate of carriers in the CsPbBr 3 @SnO 2 NCs is greatly reduced compared to that of the pristine CsPbBr 3 NCs. The stability against water degradation is also improved due to the protection of the SnO 2 coating. Accordingly, a CsPbBr 3 @SnO 2 ‐graphene hybrid device for high‐performance photodetection is demonstrated. Results show that the responsivity of the device reaches 6.2 10 4 A W −1 at 1 V, which is over 496‐fold of the pristine CsPbBr 3 device. This work not only provides a robust approach for the surface modification of CsPbX 3 NCs but also offers useful guidance on the optoelectronic applications with CsPbX 3 NCs.
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