钝化
发光二极管
量子点
材料科学
钙钛矿(结构)
光电子学
二极管
卤化物
量子效率
离子
纳米技术
无机化学
化学
图层(电子)
结晶学
有机化学
作者
Mingyang Li,Jindi Wang,Jisong Yao,Shalong Wang,Leimeng Xu,Jizhong Song
标识
DOI:10.1002/adfm.202308341
摘要
Abstract Although significant progress has been made in improving the external quantum efficiencies (EQEs) of perovskite quantum dot (QD) light‐emitting diodes (QLEDs), understanding the degradation mechanism and enhancing stability remain a challenge. Herein, increasing the content of Br‐based passivation ligands is shown to enhance the EQE up to 16.1% by reducing the defects of CsPbBr 3 QDs in a Br‐rich environment. However, the operational lifetimes of perovskite QLEDs gradually decrease with the increase of halide content, owing to the intensified ion migration under continuous electric field confirmed by the current behavior of QLEDs and time‐of‐flight secondary‐ion mass spectrometry. Furthermore, a thorough analysis of the relationship between electricity and luminance of QLEDs suggests that a small amount of residue oleic acid ligands could weaken ion migration. Accordingly, a halide‐ and acid‐hybrid (HAH) co‐passivation strategy is proposed to optimize the content of Br‐ and acid‐based ligands, and achieve a maximum EQE of 18.6% and an operational lifetime ( T 50 , extrapolated) of 213 h for CsPbBr 3 QLEDs. This approach for passivating QDs combines the high efficiency of Br‐based ligands with the improved stability of acid‐based ligands. The study elucidates the correlation between ligands and device performance, highlighting the significance of two or even multiple ligands for efficient and stable perovskite QLEDs.
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