暗电流
光电二极管
超晶格
兴奋剂
光电子学
材料科学
比探测率
量子效率
光电探测器
载流子
空间电荷
探测器
耗尽区
载流子寿命
红外探测器
光学
半导体
电子
物理
硅
量子力学
作者
Binh‐Minh Nguyen,G. Chen,A. M. Hoang,S. Abdollahi Pour,Simeon Bogdanov,M. Razeghi
摘要
We report the influence of the contact doping profile on the performance of superlattice-based minority carrier unipolar devices for mid-wave infrared detection. Unlike in a photodiode, the space charge in the p-contact of a pMp unipolar device is formed with accumulated mobile carriers, resulting in higher dark current in the device with highly doped p-contact. By reducing the doping concentration in the contact layer, the dark current is decreased by one order of magnitude. At 150 K, 4.9 μm cut-off devices exhibit a dark current of 2 × 10−5A/cm2 and a quantum efficiency of 44%. The resulting specific detectivity is 6.2 × 1011 cm Hz1/2/W at 150 K and exceeds 1.9 × 1014 cm Hz1/2/W at 77 K.
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