化学机械平面化
腐蚀
材料科学
电偶腐蚀
原电池
冶金
电化学
金属
沟槽
缝隙腐蚀
抛光
复合材料
化学
电极
图层(电子)
物理化学
作者
Seiichi Kondo,Yasuhiro Ichige,Yuya Otsuka
标识
DOI:10.7567/jjap.56.07ka01
摘要
Typical metal corrosions caused by the chemical mechanical planarization (CMP) process are discussed in this review paper. By categorizing them into seven kinds of corrosion, namely, chemical corrosion, crevice corrosion, crystal-orientation-dependent corrosion, narrow trench corrosion, photocorrosion, galvanic corrosion, and electrostatic-charge induced corrosion, we discuss their mechanisms and how to suppress them on the basis of electrochemical studies. Moreover, we demonstrate the usefulness of three-dimensional pH–potential diagrams for predicting corrosion issues in an actual CMP process.
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