分子束外延
材料科学
兴奋剂
光电子学
蓝宝石
基质(水族馆)
增长率
外延
等离子体
分析化学(期刊)
纳米技术
光学
图层(电子)
激光器
化学
地质学
几何学
数学
色谱法
物理
海洋学
量子力学
作者
Jianfeng Wang,Kelsey F. Jorgensen,Esmat Farzana,Kai Shek Qwah,Morteza Monavarian,Zachary J. Biegler,Tom Mates,James S. Speck
出处
期刊:APL Materials
[American Institute of Physics]
日期:2021-08-01
卷期号:9 (8)
被引量:3
摘要
We report on ammonia and plasma-assisted molecular beam epitaxy (NH3-MBE and PAMBE) grown GaN layers with a low net carrier concentration (Nnet). Growth parameters, such as growth rate, V–III ratio, and plasma power, were investigated on different substrates to study their impact on surface morphology and background doping levels using atomic force microscopy and capacitance–voltage (C–V) measurements, respectively. The elevated growth rates are especially interesting for vertical power switches, requiring very thick drift regions (over 10 μm) with low background concentrations. For our NH3-MBE-grown layers, Nnet shows an almost linear increase with the growth rate. Using a freestanding substrate and at a fast growth rate of 1.4 μm hr−1, a Nnet value as low as 1 × 1015 cm−3 was achieved. For samples grown via PAMBE, the lowest Nnet among samples grown under a Ga adlayer was 2 × 1016 cm−3 for a growth rate of 0.32 μm h−1 on a GaN-on-sapphire template. The results support the use of MBE for growing high-quality GaN material with reasonably fast growth rates maintaining low background doping levels for high-voltage vertical power electronic devices.
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