发光二极管
光电子学
材料科学
二极管
激发
电压
物理
量子力学
作者
Boyang Lu,Zhibiao Hao,Yi Luo,Changzheng Sun,Yanjun Han,Bing Xiong,Jing Wang,Hongtao Li,Lai Wang
标识
DOI:10.35848/1882-0786/ac863a
摘要
Abstract The processes of carrier escape and injection in InGaN/GaN LEDs have been studied separately and the underlying correlation between these two processes has been overlooked for a long time. In this study, the behavior of photogenerated carriers in LEDs is discussed which shows that the process of carrier escape and injection share the same transport channel. It is further confirmed by comparing the forward voltage under electrical excitation and open-circuit voltage under photo-excitation with the same luminous intensity. These results will not only deepen our understanding of device physics but also guide the design of devices used for display and detection.
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