量子点
玻尔半径
钝化
材料科学
磷化铟
二极管
纳米技术
表面改性
光电子学
化学
物理化学
砷化镓
图层(电子)
作者
Bing Chen,Dongyu Li,Feng Wang
出处
期刊:Small
[Wiley]
日期:2020-07-01
卷期号:16 (32)
被引量:171
标识
DOI:10.1002/smll.202002454
摘要
Abstract InP quantum dots (QDs) are typical III–V group semiconductor nanocrystals that feature large excitonic Bohr radius and high carrier mobility. The merits of InP QDs include large absorption coefficient, broad color tunability, and low toxicity, which render them promising alternatives to classic Cd/Pb‐based QDs for applications in practical settings. Over the past two decades, the advances in wet‐chemistry methods have enabled the synthesis of small‐sized colloidal InP QDs with the assistance of organic ligands. By proper selection of synthetic protocols and precursor materials coupled with surface passivation, the QYs of InP QDs are pushed to near unity with modest color purity. The state‐of‐the‐art InP QDs with appealing optical and electronic properties have excelled in many applications with the potential for commercialization. This work focuses on the recent development of wet‐chemistry protocols and various precursor materials for the synthesis and surface modification of InP QDs. Current methods for constructing light‐emitting diodes using novel InP‐based QDs are also summarized.
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