德拉姆
计算机科学
可靠性(半导体)
电子工程
带宽(计算)
三维集成电路
嵌入式系统
可靠性工程
工程类
计算机硬件
集成电路
计算机网络
操作系统
功率(物理)
物理
量子力学
作者
Jong Chern Lee,Jihwan Kim,Kyung Whan Kim,Young Jun Ku,Dae Suk Kim,Chunseok Jeong,Tae Sik Yun,Hongjung Kim,Ho Sung Cho,Sangmuk Oh,Hyun‐Sung Lee,Ki Hun Kwon,Dong Beom Lee,Young Jae Choi,Jaejin Lee,Hyeon Gon Kim,Jun Hyun Chun,Jonghoon Oh,Seok Hee Lee
标识
DOI:10.1109/isocc.2016.7799847
摘要
In this paper, HBM DRAM with TSV technique is introduced. This paper covers the general TSV feature and techniques such as TSV architecture, TSV reliability, TSV open / short test, and TSV repair. And HBM DRAM, representative DRAM product using TSV, is widely presented, especially the use and features.
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