Properties study of ZnO films prepared by ALD

ZnO and B-doped ZnO(BZO) films were deposited on the glass substrate by atomic layer deposition (ALD) method. The influence of annealing treatment and B-doping on properties of ZnO films was investigated. The results indicated that all samples have hexagonal wurtzite structure with (002) preferential orientation and the film crystallinity is improved with increasing deposition temperature and annealing temperature. The resistivity decrease with the increase of annealing temperature. The incorporation of B increases the electrical properties of the ZnO film.