Fe-substituted SrCoO3 perovskites as electrode materials for wide temperature-tolerant supercapacitors

超级电容器 材料科学 电容 电极 电解质 电化学 钙钛矿(结构) 化学工程 单斜晶系 烧结 大气温度范围 复合材料 晶体结构 化学 气象学 物理化学 工程类 物理 结晶学
作者
Liyuan Liu,Guanfu Liu,Shibo Wu,Jiahao He,Yang Zhou,Müslüm Demir,Ruona Huang,Zijin Ruan,Guohua Jiang,Pianpian Ma
出处
期刊:Ceramics International [Elsevier BV]
卷期号:50 (1): 1970-1980 被引量:57
标识
DOI:10.1016/j.ceramint.2023.10.301
摘要

Sr-based perovskites represent enormous potential as supercapacitor electrode materials. However, the wide-temperature supercapacitor application for perovskite-based electrodes has not been studied yet. Thus, there is a pressing need for comprehensive research and investigation in the wide-temperature range to unlock the full capabilities of Sr-based perovskite and pave the way for its successful integration into versatile supercapacitor systems. In this study, SrCo1-xFexO3-δ (x = 0.05, 0.10, 0.15 and 0.20) were synthesized by solid-state sintering method, as oxygen-intercalated electrode materials for wide temperature-tolerant supercapacitors. SrCo1-xFexO3-δ contains orthogonal and monoclinic phases for x = 0.05 and x = 0.10, and a stable monoclinic phase can be obtained when the substitution amount is at least 15 %. The best electrochemical performance was obtained in x = 0.10, with a specific capacitance of 526.6 F g−1 at 1 A g−1. This can be attributed to the lowest resistance and richest oxygen vacancies of SrCo0.9Fe0.1O3-δ, which are conducive to oxygen-intercalated energy storage. The SrCo0.9Fe0.1O3-δ@CC//AC@CC supercapacitor device displays a working voltage of 1.6 V and a stable long-term cycle life with 85.71 % capacity retention after 5000 cycles. Furthermore, the temperature-dependent electrochemical characterization indicates an improvement of electrochemical performance for both electrode and device as temperature increases, which may be ascribed to the enhanced ion migration in the electrolyte. From 0 to 85 °C, the specific capacitance of SrCo0.9Fe0.1O3-δ@CC electrode increases from 91.8 to 1035.9 F g−1 at 1A g−1, and the energy density of the device also increases from 7.6 to 26.2 Wh kg−1 when the power density is 800 W kg−1.
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