Electrically tunable interlayer recombination and tunneling behavior in WSe2/MoS2 heterostructure for broadband photodetector

A dual-gated WSe 2 /MoS 2 phototransistor is fabricated and investigated. Its conduction and rectification characteristics can be tuned by dual gates showing p–i, p–n, i–n and n–n states, due to the charging and depletion of WSe 2 and MoS 2 .