Enhanced Photodetector Performance of Nanostructured MoO3-x Thin Films by Inert Annealing

In this research work, the effect of annealing temperature on the performance of molybdenum trioxide (MoO3)-based metal–semiconductor–metal (MSM) planar-structured ultraviolet (UV) photodetector is studied. The MoO $_{{3}-{x}}$ thin films are grown at 5.0% of oxygen partial pressure onto the SiO2/Si substrate through the sputtering technique. Later, the as-deposited thin films are inertly annealed at 150 °C, 250 °C, and 350 °C in the ambience of inert gas (Ar). From the field emission scanning electron microscopy (FESEM) image, the prominent formation of nanorod-based morphology is observed for the sample annealed at 350 °C and it can increase the surface-area-to-volume ratio of the sample, which helps it to produce more number of charge carriers and causes to increase the photocurrent of the device. The current–voltage ( ${I}$ – ${V}$ ) characteristics of the Ag/MoO $_{{3} -{x}}$ /Ag-based test devices depict the ohmic contact in the Ag-MoO $_{{3} -{x}}$ interface. The sample annealed at 350 °C shows a high photocurrent of $21.21 \mu \text{A}$ , a fast response time of 60 ms, and a high responsivity of 2.905 A/W. Finally, this research work could provide a platform for the advancement of superior photodetectors in optoelectronics devices.