闪烁体
产量(工程)
光致发光
卤化物
量子产额
发光
分析化学(期刊)
材料科学
兴奋剂
结晶
激发态
碘化物
化学
光学
荧光
光电子学
原子物理学
物理
无机化学
探测器
有机化学
冶金
色谱法
作者
Wenzhen Wang,Huanzhen Qi,Fengcai Liu,Hua Meng,Cai Jiang,Shanhu Xu,Shengqi Jing,Feng Hong,Yanyan Zhu,Haitao Xu,Run Xu,Jianming Lai,Fei Xu,Linjun Wang
标识
DOI:10.1021/acs.cgd.0c00256
摘要
A nonvacuum solution-based growth process featuring an inverse temperature crystallization was demonstrated to grow high light yield halide scintillator single crystals. The as-grown Tl-doped cesium iodide, CsI(Tl), single crystals exhibit high transparency and characteristic Tl-doped photoluminescence and X-ray excited luminescence spectra with a decay time of about 535 ns at 550 nm emission peak. The CsI(Tl) scintillator with a low Tl doping concentration of 146.7 ppm grown by the solvent-based growth method exhibits a high light yield of 119 000 ± 6000 photons/MeV, which is about 1.3 times higher than those grown by the conventional melting method with a higher Tl concentration. This simple and convenient process may present a promising low-cost method for the mass production development of halide scintillator single crystals.
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