Growth temperature dependence of MnSb synthesis on GaAs (111) B using molecular beam epitaxy

Abstract In this study, we employed MBE to synthesize four MnSb samples on GaAs (111) B substrate at growth temperatures 300 °C, 400 °C, 500 °C, and 600 °C for GT-300, GT-400, GT-500, and GT-600 samples respectively. Surface morphology and elemental composition were characterized using scanning electron microscopy and energy-dispersive X-ray spectroscopy for four prepared samples. X-ray diffraction was performed to assess the crystal formation and surface quality of all samples. Epitaxial growth confirmation was performed using electron backscatter diffraction. Magnetic properties were assessed via superconducting quantum interference device measurements. Based on these comprehensive characterizations, the GT-500 sample, grown at a temperature of 500 °C (pyrometer 410 °C), demonstrated excellent surface morphology, crystal formation, surface quality, and magnetic properties. This sample holds outstanding potential for future applications, particularly in fabricating spintronics devices as a high-quality ferromagnetic source/drain, powering remote sensors, and thermoelectric devices.