量子点
带隙
材料科学
光电子学
工程物理
纳米技术
物理
作者
Ho Kyung Lee,Taehyun Park,Hocheon Yoo
出处
期刊:Materials
[MDPI AG]
日期:2024-10-31
卷期号:17 (21): 5335-5335
摘要
Quantum dots (QDs) are becoming essential materials for future scientific and real-world applications, owing to their interesting and distinct optical and electrical properties compared to their bulk-state counterparts. The ability to tune the bandgap of QDs based on size and composition-a key characteristic-opens up new possibilities for enhancing the performance of various optoelectronic devices. These advances could extend to cutting-edge applications such as ultrawide-band or dual-band photodetectors (PDs), optoelectronic logic gates, neuromorphic devices, and security functions. This paper revisits the recent progress in QD-embedded optoelectronic applications, focusing on bandgap tunability. The current limitations and challenges in advancing and realizing QD-based optoelectronic devices are also discussed.
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