Millimeter-Wave AlGaN/GaN HEMTs on Si Operated at 12V and its modeling for 5G Handset Applications

In this paper, a RF AlGaN/GaN high electron mobility transistor (HEMT) based on low voltage application of 5G RF handset, firstly fabricated on high-resistive silicon substrate is introduced, which uses Ni/Au as T-shaped gate structure and double-layer silicide as surface medium. The maximum output current density of the device is 1.07 A/mm at V ds = 12 V and V gs = 2 V. f T = 27.8 GHz and BV (the breakdown voltage) = 35 V/µm are obtained for the 180-nm gate-length device with 1-µm source-to-gate spacing.