阈值电压
薄膜晶体管
材料科学
双稳态
无定形固体
薄膜
阈下摆动
阈下传导
光电子学
退火(玻璃)
晶体管
氧气
分析化学(期刊)
凝聚态物理
纳米技术
化学
电气工程
结晶学
冶金
电压
有机化学
工程类
图层(电子)
物理
色谱法
作者
Keisuke Ide,Yutomo Kikuchi,Kenji Nomura,Mutsumi Kimura,Toshio Kamiya,Hideo Hosono
摘要
Operation characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) were improved to a subthreshold voltage swing (S) of 217 mV (decade)−1, a mobility of ∼11.4 cm2 (Vs)−1, and a threshold voltage (Vth) of 0.1 V by O3 annealing at a temperature as low as 150 °C. However, the O3 annealing at 300 °C caused serious deterioration and exhibited a bistable transition between a large S state and a large Vth state. This transition is attributed to incorporation of excess oxygen and associated subgap defects with a negative-U characteristic. It also explains why a-IGZO channels deposited at high oxygen pressures do not produce operating TFTs.
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