制作
静电放电
瞬态电压抑制器
瞬态(计算机编程)
电压
CMOS芯片
电气工程
炸薯条
过程(计算)
材料科学
电子工程
工程类
光电子学
计算机科学
医学
替代医学
病理
操作系统
作者
J. Urresti,S. Hidalgo,D. Flores,J. Rebollo
出处
期刊:Spanish Conference on Electron Devices
日期:2009-02-01
卷期号:8: 148-151
被引量:2
标识
DOI:10.1109/sced.2009.4800452
摘要
The design and fabrication of a novel lateral punch-through TVS (transient voltage suppressor) device addressed to on chip protection against ESD (electrostatic discharge) is reported in this paper. In order to reduce the breakdown voltage, the inclusion of a field place, connected to the collector, has been proposed for first time. The compatible CMOS technological process followed in the integration of this device and its technological and electrical characterization is large explained, being these results in agreement with the previous studies.
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