生化工程
限制
纳米技术
材料科学
计算机科学
工艺工程
风险分析(工程)
工程类
机械工程
业务
作者
Haijun Liu,Jiong Zhao,Thuc Hue Ly
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-04-24
卷期号:18 (18): 11573-11597
被引量:6
标识
DOI:10.1021/acsnano.4c01000
摘要
The growth of two-dimensional (2D) materials through chemical vapor deposition (CVD) has sparked a growing interest among both the industrial and academic communities. The interest stems from several key advantages associated with CVD, including high yield, high quality, and high tunability. In order to harness the application potentials of 2D materials, it is often necessary to transfer them from their growth substrates to their desired target substrates. However, conventional transfer methods introduce contamination that can adversely affect the quality and properties of the transferred 2D materials, thus limiting their overall application performance. This review presents a comprehensive summary of the current clean transfer methods for 2D materials with a specific focus on the understanding of interaction between supporting layers and 2D materials. The review encompasses various aspects, including clean transfer methods, post-transfer cleaning techniques, and cleanliness assessment. Furthermore, it analyzes and compares the advances and limitations of these clean transfer techniques. Finally, the review highlights the primary challenges associated with current clean transfer methods and provides an outlook on future prospects.
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