基面
位错
同步加速器
GSM演进的增强数据速率
材料科学
结晶学
凝聚态物理
物理
光学
计算机科学
化学
电信
作者
H. Wang,Fangzhen Wu,Shayan Byrappa,Shijia Sun,Balaji Raghothamachar,Michael Dudley,Edward Sanchez,David Hansen,Roman Drachev,Stephan G. Mueller,Mark J. Loboda
摘要
Synchrotron white beam x-ray topography (SWBXT) observations are reported of single-ended Frank-Read sources in 4H-SiC. These result from inter-conversion between basal plane dislocations (BPDs) and threading edge dislocations (TEDs) brought about by step interactions on the growth interface resulting in a dislocation comprising several glissile BPD segments on parallel basal planes interconnected by relatively sessile TED segments. Under stress, the BPD segments become pinned by the TED segments producing single ended Frank-Read sources. Since the BPDs appear to “hop” between basal planes, this apparently dominant multiplication mechanism for BPDs in 4H-SiC is referred to as the “Hopping” Frank-Read source mechanism.
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