Diamond Metal-Semiconductor Field-Effect-Transistor-based Solar Blind Detector

In this paper, a microwave plasma chemical vapor deposition (MPCVD) method is used to homoepitaxially epitaxial diamond film on a high-pressure high temperature(HPHT) diamond substrate, and a metal-semiconductor field effect transistor (MESFET) solar-blind detector is prepared to measure the photoelectric response performance of the detector. The results show that the detector made of diamond has a good photoelectric response to deep ultraviolet light.