有源矩阵
摇摆
薄膜晶体管
有机发光二极管
材料科学
AMOLED公司
灰度级
光电子学
阈下摆动
图像质量
阈下传导
计算机科学
电气工程
图像(数学)
人工智能
晶体管
工程类
纳米技术
阈值电压
电压
机械工程
图层(电子)
作者
Soobin An,Junhyeong Park,Jinkyu Lee,Yong Il Yun,Sooyeon Lee
摘要
In this paper, high subthreshold swing (SS) amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors (TFTs) were fabricated using a sputtered Al2O3 layer, which was deposited on an active layer of the conventional bottom‐gate a‐IGZO TFTs and patterned using photolithography. By optimizing the Al 2 O 3 layer, high SS without mobility degradation could be achieved.
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