太阳能电池
异质结
光电子学
光伏系统
短路
太阳能电池理论
开路电压
材料科学
电流密度
带隙
薄膜
兴奋剂
能量转换效率
吸收(声学)
电压
聚合物太阳能电池
纳米技术
电气工程
物理
复合材料
工程类
量子力学
作者
Jaker Hossain,Bipanko Kumar Mondal,Shaikh Khaled Mostaque
标识
DOI:10.1088/1361-6641/ac30e9
摘要
This article reports the design and computational analysis of an efficient GeSe-based n-ZnSe/p-GeSe/p+-WSe2 dual-heterojunction (DH) thin film solar cell using SCAPS-1D simulation program with physical parameters from the literature. The device has been optimized considering the thickness, doping and defect density of each layer. The optimized device shows an efficiency of ∼42.18% with a short circuit current density, JSC of 47.84 mA cm−2, an open circuit voltage, VOC of 1.07 V and fill factor, FF of 82.80%, respectively that remains within the Shockley-Queisser limit of a DH solar cell. The raised built-in potential developed between the two interfaces of the devices produces a surpassing VOC. The higher JSC is attributed to the current generated by absorption of sub-band gap photons by a tail-states-assisted two-step photon upconversion mechanism in the WSe2 back surface field layer. These results indicate the potential of manufacturing the high efficiency GeSe-based DH solar cell in future.
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