磁阻随机存取存储器
旋转扭矩传递
电压
大约
自旋(空气动力学)
字错误率
堆栈(抽象数据类型)
凝聚态物理
物理
隧道磁电阻
计算机科学
电气工程
核磁共振
光电子学
材料科学
随机存取存储器
铁磁性
磁场
磁化
计算机硬件
量子力学
人工智能
热力学
操作系统
工程类
程序设计语言
作者
Janusz Nowak,R. P. Robertazzi,J. Z. Sun,G. Hu,Jeong-Heon Park,JungHyuk Lee,Anthony Annunziata,G. Lauer,Raman Kothandaraman,Eugene J. O Sullivan,P. L. Trouilloud,Younghyun Kim,D. C. Worledge
出处
期刊:IEEE Magnetics Letters
[Institute of Electrical and Electronics Engineers]
日期:2016-01-01
卷期号:7: 1-4
被引量:124
标识
DOI:10.1109/lmag.2016.2539256
摘要
The dependence of the write-error rate (WER) on the applied write voltage, write pulse width, and device size was examined in individual devices of a spin-transfer torque (STT) magnetic random-access memory (MRAM) 4 kbit chip. We present 10 ns switching data at the 10 -6 error level for 655 devices, ranging in diameter from 50 nm to 11 nm, to make a statistically significant demonstration that a specific magnetic tunnel junction stack with perpendicular magnetic anisotropy is capable of delivering good write performance in junction diameters range from 50 to 11 nm. Furthermore, write-error-rate data on one 11 nm device down to an error rate of 7×10 -10 was demonstrated at 10 ns with a write current of 7.5 μA, corresponding to a record low switching energy below 100 fJ.
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