空位缺陷
结合能
硅
消灭
铝
材料科学
正电子
合金
俘获
活化能
原子物理学
结晶学
凝聚态物理
化学
物理化学
核物理学
电子
物理
冶金
生态学
生物
作者
S M Kim,W. J. L. Buyers,P. Martel,G.M. Hood
出处
期刊:Journal of Physics F: Metal Physics
[IOP Publishing]
日期:1974-03-01
卷期号:4 (3): 343-350
被引量:35
标识
DOI:10.1088/0305-4608/4/3/007
摘要
Measurements have been made of the positron annihilation coincidence counting rate at the peak position in aluminum and in an Al-0.27 at% Si alloy as a function of temperature from 25 degrees C to 600 degrees C. The results were analysed according to the positron trapping model to yield the vacancy formation energy, Ef, and the vacancy-silicon binding free energy. The thermal expansion of the sample and the temperature dependence of the Si solubility were taken into account, and the trapping rate assumed to be temperature independent. For pure aluminum it is found that Ef=0.67+or-0.03 eV. For the Al-Si alloy a least squares analysis based on the Lomer expression for the vacancy concentration of a dilute alloy shows that the vacancy-silicon binding free energy is 0.12 eV. This is smaller than the binding free energy of 0.20 eV found by Burke and King (1970) from length and lattice parameter thermal expansion measurements.
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