材料科学
薄膜晶体管
光电子学
非晶硅
灵活的显示器
制作
聚对苯二甲酸乙二醇酯
半导体
硅
二极管
晶体管
无定形固体
数码产品
柔性电子器件
纳米技术
晶体硅
电气工程
复合材料
图层(电子)
医学
化学
替代医学
有机化学
工程类
病理
电压
作者
Kenji Nomura,Hiromichi Ohta,Akihiro Takagi,Toshio Kamiya,Masahiro Hirano,Hideo Hosono
出处
期刊:Nature
[Springer Nature]
日期:2004-11-01
卷期号:432 (7016): 488-492
被引量:6577
摘要
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.
科研通智能强力驱动
Strongly Powered by AbleSci AI