Self‐Powered Infrared‐Detectable BP/Ta2NiS5 Heterojunction and Its Application in Energy‐Efficient Optoelectronic Synapses

The development of energy-efficient and high-performance optoelectronic devices is crucial for the advancement of modern optoelectronic and microelectronic systems. Although the self-powered devices and optoelectronic synapses based on 2D heterojunction show great application prospects, the high energy consumption and infrared band detection of self-powered optoelectronic synapses are still an urgent problem to be solved. In this report, a BP/Ta