光电子学
红外线的
有机发光二极管
材料科学
锗
氧化铟锡
光电探测器
光子上转换
二极管
发光二极管
可见光谱
光学
硅
纳米技术
图层(电子)
兴奋剂
物理
作者
Tianyu Rao,Yawei Qi,Qun Hao,Menglu Chen,Xin Tang,Ge Mu
摘要
Infrared-to-visible upconverters consisting of infrared photodetectors (PDs) with visible light-emitting diodes (LEDs) to directly visualize infrared images without intermediate electronics have stimulated research interest. However, existing upconverters mostly detect infrared only in the near-infrared region, preventing the extensive short-wave infrared (SWIR) application. Here, we innovatively integrate strong-SWIR-response n-type germanium (Ge)/indium tin oxide (ITO) PDs with phosphorescence organic LEDs (OLEDs) to realize the efficient upconversion of SWIR to green light through a simple fabrication process. The ITO layers not only construct Schottky heterojunction with the Ge to improve SWIR detection ability but also provide the photogenerated carriers transport channel from PDs to OLEDs. As a result, the Ge-OLED upconverters exhibit the efficient upconversion of SWIR and high p–p efficiency of 7%.
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