电气工程
电容器
CMOS芯片
缓冲器(光纤)
炸薯条
功率(物理)
电压
过零点
物理
工程类
量子力学
作者
Christoph Rindfleisch,Bernhard Wicht
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2022-09-08
卷期号:57 (12): 3816-3824
被引量:11
标识
DOI:10.1109/jssc.2022.3199653
摘要
This work presents an offline power supply with fully integrated power stage in 0.18 $\mu \text{m}$ high-voltage (HV) CMOS silicon on insulator (SOI). It supports both ac–dc and dc–dc conversion from 15–400 V input down to 3.3–10 V output and is optimized for applications below 300 mW such as the Internet of Things (IoT), smart home, and e-mobility. An active zero-crossing buffer enables on-chip integration of the HV buffer capacitor. Below 150 V, constant ON-time control is based on voltage intervals, sensed by ten HV threshold-detection circuits. Above 150 V, the converter operates in the resonant mode. It achieves a superior power density of 458 mW/cm3 and 84% peak efficiency.
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