UV Total Dose Nonvolatile Sensor Using Silicon–Oxide–Nitride–Oxide–Silicon Capacitor with Oxy-nitride as Charge-trapping Layer

Silicon-oxide-nitride-oxide-silicon (SONOS) capacitor devices with an oxy-nitride as the charge-trapping layer (O-SONOS) could be candidates for UV total dose (TD) nonvolatile sensors.UV radiation induces a significant increase in the threshold voltage V T of the O-SONOS UV TD nonvolatile radiation sensors.The experimental results indicate that the UV-induced increase in V T for the O-SONOS capacitor device under positive gate bias stress (PGBS) is nearly 2 V after 100 mW•s/cm 2 TD UV radiation.The change in V T for the O-SONOS capacitor after UV irradiation is also correlated with UV TD up to 100 mW•s/cm 2 irradiation.The charge-retention loss of the nonvolatile O-SONOS capacitor after a 10-year retention is below 10%.The UV TD information can be permanently stored and accumulated in nonvolatile O-SONOS capacitor devices.The O-SONOS capacitor device used in this study has demonstrated the feasibility of nonvolatile UV TD sensing.