异质结
材料科学
阳极
纳米技术
电荷(物理)
纳米晶
扩散
数码产品
光电子学
离子
工程物理
电极
化学
工程类
物理
物理化学
热力学
量子力学
有机化学
作者
Yang Zheng,Tengfei Zhou,Chaofeng Zhang,Jianfeng Mao,Huan Liu,Zaiping Guo
标识
DOI:10.1002/anie.201510978
摘要
Abstract Constructing heterostructures can endow materials with fascinating performance in high‐speed electronics, optoelectronics, and other applications owing to the built‐in charge‐transfer driving force, which is of benefit to the specific charge‐transfer kinetics. Rational design and controllable synthesis of nano‐heterostructure anode materials with high‐rate performance, however, still remains a great challenge. Herein, ultrafine SnS/SnO 2 heterostructures were successfully fabricated and showed enhanced charge‐transfer capability. The mobility enhancement is attributed to the interface effect of heterostructures, which induces an electric field within the nanocrystals, giving them much lower ion‐diffusion resistance and facilitating interfacial electron transport.
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