凝聚态物理
费米气体
异质结
霍尔效应
电子
电子密度
量子霍尔效应
材料科学
航程(航空)
电子迁移率
态密度
带隙
载流子密度
大气温度范围
物理
电阻率和电导率
热力学
量子力学
兴奋剂
复合材料
作者
Jinfeng Zhang,Jincheng Zhang,Yue Hao
出处
期刊:Chinese Physics
[IOP Publishing]
日期:2004-07-29
卷期号:13 (8): 1334-1338
被引量:17
标识
DOI:10.1088/1009-1963/13/8/027
摘要
The theoretic calculation and analysis of the temperature dependence of Hall electron density of a sample AlGaN/GaN heterostructure has been carried out in the temperature range from 77 to 300K. The densities of the two-dimensional electron gas and the bulk electrons are solved by self-consistent calculation of one-dimensional Schrödinger and Poisson equations at different temperatures, which allow for the variation of energy gap and structure strain and are used for evaluation of the temperature dependence of Hall electron density. The calculated Hall electron density agrees with the measured one quite well with the appropriate bulk mobility data. Analysis revealed that for the temperature range considered, even in the heterostructures with a small bulk conductance the factors that determine the Hall mobility and electron density could be of different sources and not just the two-dimensional electron gas as generally supposed.
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