量子阱
透射电子显微镜
材料科学
六面体
凝聚态物理
电子显微镜
原子力显微镜
量子
结晶学
化学
纳米技术
光学
物理
激光器
热力学
有限元法
量子力学
作者
Y. Chen,Tetsuya Takeuchi,Hiroshi Amano,Isamu Akasaki,N. Yamada,Y. Kaneko,Shih-Yuan Wang
摘要
The formation of pits in GaInN quantum wells (QWs) has been studied by atomic force microscopy and transmission electron microscopy. It is found that the pits have a hexahedron cone morphology with six sidewalls on 〈11̄01〉 planes and dislocations connected to their vertexes. The dislocations may induce the formation of pits during the growth of GaInN QWs.
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