Control of silicon network structure in plasma deposition

Controllability of the Si network structure ranging from amorphous to microcrystalline, polycrystalline, or epitaxial growth has been achieved in conventional glow discharge of silane by controlling the extent of hydrogen ‘etching’ during film growth. The concept of film formation as a balance between deposition and ‘etching’ of the growing surface is discussed. Since energetically unfavorable configurations are preferentially eliminated, ‘etching’ reduces the temperature required to remove weak or strained bonds and produces device quality a-Si:H. It is also responsible for achieving low temperature crystallinity.