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三颗石头
Lv7
3
4870 积分
2020-08-17 加入
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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
1个月前
已完结
Observation of threading dislocations and misfit dislocation half-loops in GaN/AlGaN heterostructures grown on Si using electron channeling contrast imaging
1个月前
已完结
High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 V
2个月前
已完结
Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications
2个月前
已完结
1kV Vertical Breakdown Voltage AlGaN/GaN HEMTs on Si with AlN and AlGaN/AlN Superlattice Buffer Engineering
3个月前
已完结
Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching
3个月前
已完结
ScAlInN/GaN heterostructures grown by molecular beam epitaxy
6个月前
已完结
Wurtzite and fluorite ferroelectric materials for electronic memory
6个月前
已完结
MBE growth of high conductivity single and multiple AlN/GaN heterojunctions
6个月前
已完结
Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions
6个月前
已完结
Delamination behavior of lithium-ion battery anodes: Influence of drying temperature during electrode processing
2年前
已采纳
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