Lv41
474 积分 2023-04-03 加入
Prediction of overshoot and crosstalk of low‐voltage GaN HEMT using analytical model
1小时前
已完结
Impact of ${V_{\mathsf {th}}}$ Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors
1小时前
已完结
Analysis of GaN-HEMT Switching Current Overshoot in a Half-Bridge Circuit
1小时前
已完结
A Suppression Method for Gate-Source Voltage Oscillation With Clamping Function for GaN Devices
6小时前
已完结
The Future of GaN is Also High Voltage, High Current, and Bidirectional: (Invited)
27天前
已完结
GaN Bidirectional Switches: The Revolution is Here
27天前
已完结
Combo ICeGaN: The Combination of a Smart GaN HEMT and an IGBT
27天前
已完结
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
27天前
已完结
Characteristics and Operation of a Monolithic Bidirectional GaN-on-AlN/SiC Power Transistor employing Dual-Gate
28天前
已完结
Influence of Substrate connection on dynamic-RON drift of 650V packaged GaN HEMTs
1个月前
已完结
皖公网安备34019202002308
