Lv2
126 积分 2024-06-04 加入
Effect of Silicon Doping in the Quantum-Well Barriers on the Electrical and Optical Properties of Visible Green Light-Emitting Diodes
3个月前
已完结
Effect of light Si doping on the properties of GaN
3个月前
已完结
Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers
3个月前
已完结
Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes
3个月前
已完结
High‐Temperature Annealing of Si‐Doped AlGaN
3个月前
已完结
Characteristics of InGaN light emitting diode depending on Si-doping on InGaN layers below quantum wells
3个月前
已完结
Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes
3个月前
已完结
Leakage of holes induced by Si doping in the AlGaN first barrier layer in GaN/AlGaN multiple-quantum-well ultraviolet light-emitting diodes
3个月前
已完结
Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure
3个月前
已完结
Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice
3个月前
已关闭
皖公网安备34019202002308
