Lv11
40 积分 2023-09-30 加入
Designs for III-nitride edge-emitting laser diodes with tunnel junction contacts for low internal optical absorption loss
2小时前
已完结
Review of the Failure Mechanism and Methodologies of IGBT Bonding Wire
2个月前
已完结
Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate
5个月前
已完结
Transversely superimposed gratings for narrow far-field terahertz surface emission of nonlinear quantum cascade lasers
5个月前
已完结
Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an in situ InGaN decomposition template
6个月前
已完结
High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal
6个月前
已完结
Monolithically and Vertically Integrated LED-on-FET Device Based on a Novel GaN Epitaxial Structure
6个月前
已完结
Low-Leakage High-Breakdown Laterally Integrated HEMT-LED via n-GaN Electrode
6个月前
已完结
Investigation of Electrical Properties of InGaN‐Based Micro‐Light‐Emitting Diode Arrays Achieved by Direct Epitaxy
6个月前
已完结
Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor
6个月前
已完结
皖公网安备34019202002308
