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2024-01-03 加入
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Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer
4小时前
待确认
Design and Fabrication of a Photodetector for UV/Blue Wavelength Region for Low-Light Intensity Levels Using InGaN/GaN Superlattice Structure
12天前
已完结
High-speed uni-traveling-carrier photodiodes on silicon nitride
18天前
已完结
Superhigh Gain and High Speed InGaN/GaN Visible-light Photodetector using Polarization Heterointerface Barrier and Single-carrier Superlattices
18天前
已完结
Comprehensive TCAD Analysis of Threshold Voltage on GaN-on-Si MOS-Channel Fully Recessed Gate HEMTs
2个月前
已完结
Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure
2个月前
已完结
High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes
2个月前
已关闭
545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT (Vth > 4 V) by Ion Beam Etching
2个月前
已完结
Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study
2个月前
已完结
A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor
3个月前
已完结
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9个月前
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