Lv1
32 积分 2024-01-03 加入
TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs
11小时前
待确认
Spectral characteristics of broad band-rejection filter based on Bragg grating, one-dimensional photonic crystal, and subwavelength grating waveguide
26天前
已完结
High-speed III-V based avalanche photodiodes for optical communications—the forefront and expanding applications
1个月前
已完结
Self-Assembly Nanopillar/Superlattice Hierarchical Structure: Boosting AlGaN Crystalline Quality and Achieving High-Performance Ultraviolet Avalanche Photodetector
1个月前
已完结
Breaking the Responsivity‐Bandwidth Trade‐Off Limit in GaN Photoelectrodes for High‐Response and Fast‐Speed Optical Communication Application
1个月前
已完结
High-Sensitivity and Fast-Speed UV Photodetectors Based on Asymmetric Nanoporous-GaN/Graphene Vertical Junction
1个月前
已完结
Wafer-scale high sensitive UV photodetectors based on novel AlGaN/n-GaN/p-GaN heterostructure HEMT
1个月前
已完结
Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning
1个月前
已完结
Self-Assembly Nanopillar/Superlattice Hierarchical Structure: Boosting AlGaN Crystalline Quality and Achieving High-Performance Ultraviolet Avalanche Photodetector
1个月前
已完结
Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer
1个月前
已完结
皖公网安备34019202002308
