Lv11
48 积分 2025-02-25 加入
Influence of partial charge on the material removal rate during chemical polishing
1个月前
已完结
Zeta potential-tunable silica abrasives and fluorinated surfactants in chemical mechanical polishing slurries
1个月前
已完结
Computational performance of a generalized descent gradient method based algorithm with conformable fractional-order derivatives
1个月前
已关闭
Effect of Particle Size and pH Value of Slurry on Chemical Mechanical Polishing of SiO2 Film
1个月前
已完结
Recent Advances in Polishing of Advanced Materials
1个月前
已完结
Origin and Innovations of CMP Slurry
1个月前
已完结
Characterization of Slurries Used for Chemical‐Mechanical Polishing (CMP) in the Semiconductor Industry
1个月前
已完结
Design of composite abrasives and substrate materials for chemical mechanical polishing applications
2个月前
已完结
Chemical-Mechanical Polishing of CdZnTe Substrates to Achieve the Surface Morphology for the Synthesis of A2B6 Solid Solutions by Molecular Beam Epitaxy
2个月前
已完结
Chemical mechanical polishing and nanomechanics of semiconductor CdZnTe single crystals
2个月前
已完结
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