Lv41
660 积分 2023-05-23 加入
A Two‐Step Dry Etching Model for Non‐Uniform Etching Profile in Gate‐All‐Around Field‐Effect Transistor Manufacturing
2个月前
已完结
World's first GAA 3nm foundry platform technology (SF3) with novel multi-bridge-channel-FET (MBCFET™) process
6个月前
已完结
GAA Technology Innovations for 2nm Logic node and Beyond
6个月前
已完结
(Invited) Cutting-Edge Epitaxial Processes for Sub 3 Nm Technology Nodes: Application to Nanosheet Stacks and Epitaxial Wrap-Around Contacts
6个月前
已完结
Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and Beyond
6个月前
已完结
Self-Assembled Three-Dimensional Graphene-Based Polyhedrons Inducing Volumetric Light Confinement
7个月前
已完结
Ultrahigh mobility semiconducting epitaxial graphene on silicon carbide
7个月前
已完结
Characteristics of high-order silane based Si and SiGe epitaxial growth under 600 ℃
8个月前
已完结
Highly selective isotropic chemical dry etching for gate-all-around devices: nanosheet, forksheet and complementary FETs
8个月前
已关闭
Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond
8个月前
已完结
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