Lv3
240 积分 2024-02-26 加入
Characterization of MOCVD-grown non-stoichiometric SiNx
1个月前
已完结
Metal–Organic Vapor Phase Epitaxy of High‐Quality GaN on Al‐Pretreated Sapphire Substrates Without Using Low‐Temperature Buffer Layers
2个月前
已完结
Optimization of GaN wafer bow grown on cone shaped patterned sapphire substrates
2个月前
已完结
InGaN蓝光LED内量子效率的评测
2个月前
已完结
Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates
2个月前
已完结
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules
2个月前
已完结
Nucleation mechanism for epitaxial growth of GaN on patterned sapphire substrates
2个月前
已完结
Pure edge-dislocation half-loops in low-temperature Ga N for V-defect formation
2个月前
已完结
The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate
2个月前
已完结
Growth of Semipolar (11bar 22) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate
2个月前
已完结
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