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Time-resolved mid-infrared photoluminescence spectroscopy of an undoped InAs substrate
9天前
已完结
Time-resolved mid-infrared photoluminescence from highly strained InAs/InGaAs quantum wells grown on InP substrates
9天前
已完结
Editor’s note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X]
9天前
已关闭
Editor’s note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X]
24天前
已完结
Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study
2个月前
已完结
Kinetics of accumulation of excess holes under photoexcitation and their relaxation in GaAs/AlGaAs shallow quantum wells
3个月前
已完结
Photoconductivity and Infrared-Light Absorption in p-GaAs/AlGaAs Quantum Wells
4个月前
已完结
MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors
4个月前
已完结
Monolithic growth of GaAs/Al0.3Ga0.7As multiple quantum well structure on Ge substrate with low defects: theoretical and experimental correlation of the structural and optical properties
4个月前
已完结
Strain relaxation in high-speed p-i-n photodetectors with In0.2Ga0.8As/GaAs multiple quantum wells
5个月前
已完结
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