Preparation of functional Ga2S3 and Ga2Se3 shells around Ga2O3 nanowires via sulfurization or selenization

Combining defect semiconductors Ga2S3 and Ga2Se3 in Ga2O3-based heterostructured nanowires (NWs) have potential in photonics and optoelectronics applications due to the materials appealing optical properties. In this work, we have developed and studied Ga2O3–Ga2S3 and, for the first time, Ga2O3–Ga2Se3 core-shell NWs. Ga2S3 and Ga2Se3 shell was obtained during high-temperature sulfurization and selenization process of pure Ga2O3 NWs, respectively, in a chemical vapour transport reactor. As-grown nanostructures were characterized with scanning and transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and photoluminescence measurements. Single-nanowire photodetector devices were fabricated in order to demonstrate their electric and photoconductive properties. Such novel core-shell NW heterostructures could potentially be used in next-generation nanoscale electronic and optoelectronic devices.