材料科学
硫系化合物
相变存储器
无定形固体
结晶
德拉姆
再结晶(地质)
加速
纳秒
切换时间
动态随机存取存储器
纳米技术
光电子学
计算机科学
并行计算
计算机硬件
结晶学
热力学
光学
物理
古生物学
激光器
化学
半导体存储器
图层(电子)
生物
作者
Jiabin Shen,Wenxiong Song,Kun Ren,Song Zhang,Peng Zhou,Min Zhu
标识
DOI:10.1002/adma.202208065
摘要
Abstract Phase‐change memory (PCM) is one of the most promising candidates for next‐generation data‐storage technology, the programming speed of which has enhanced within a timescale from milliseconds to sub‐nanosecond (≈500 ps) through decades of effort. As the potential applications of PCM strongly depend on the switching speed, namely, the time required for the recrystallization of amorphous chalcogenide media, the finding of the ultimate crystallization speed is of great importance both theoretically and practically. In this work, through systematic analysis of discovered phase‐change materials and ab initio molecular dynamics simulations, elemental Sb‐based PCM is predicted to have a superfast crystallization speed. Indeed, such cells experimentally present extremely fast crystallization speeds within 360 ps. Remarkably, the recrystallization process is further sped up as the device shrinks, and a record‐fast crystallization speed of only 242 ps is achieved in 60 nm‐size devices. These findings open opportunities for dynamic random‐access memory (DRAM)‐like and even cache‐like PCM using appropriate storage materials.
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