肖特基势垒
响应度
光电流
光电探测器
光电子学
暗电流
材料科学
硅
电极
半导体
肖特基二极管
光电导性
化学
物理化学
二极管
作者
You Jin Kim,Ramit Kumar Mondal,Mohan Kumar Ghimire,Munho Kim
摘要
We present a highly efficient self-powered silicon metal–semiconductor–metal (MSM) photodetector (PD). The key feature of our device lies in its asymmetric electrode design, which induces an asymmetry in the Schottky barrier heights at the MSM interface. We utilize a built-in electric field that originates from the larger electrode and extends toward the smaller electrode due to the presence of trapped holes on the larger electrode side. This approach facilitates efficient charge carrier separation and collection, leading to self-powered operation across a wavelength range of 300–1000 nm at 0 V bias. The PD exhibits a high responsivity of 513 mA/W and detectivity of 2.04 × 1011 Jones at a wavelength of 1000 nm. Furthermore, the normalized photocurrent-to-dark current ratio (NPDR) analysis reveals the PD's superior dark current suppression capabilities, resulting in high sensitivity and reliable detection.
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