轨道能级差
电导
费米能级
分子
扫描隧道显微镜
密度泛函理论
量子隧道
化学
态密度
材料科学
分子轨道
化学物理
结晶学
计算化学
凝聚态物理
纳米技术
物理
电子
光电子学
有机化学
量子力学
作者
Hiroshi Okuyama,S. Kuwayama,S. Hatta,Tetsuya Aruga,Yuji Hamamoto,Teruhisa Shimada,Ikutaro Hamada,Yoshitada Morikawa
标识
DOI:10.1016/j.apsusc.2023.158700
摘要
The electronic states and conductance of CuPc, F8CuPc, and F16CuPc on Cu(100) were studied by using scanning tunneling microscopy (STM) and the density functional theory (DFT) calculations. For all molecules, the lowest unoccupied molecular orbital (LUMO) was observed around the Fermi level (EF), regardless of the difference in the original LUMO levels of the free molecules. This indicates that the strong interaction causes the pinning of EF at LUMO levels. Meanwhile, the differential conductance at EF is drastically affected by the substitution: it increases and decreases for CuPc and F16CuPc, respectively, suggesting that the Fano effect plays a major role in the conductance. This finding provides a new strategy for the control of molecular conductance by chemical substitution.
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