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2021-06-04 加入
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Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors
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Performance Improvement by Blanket Boron Implant in the Sigma-Shaped Trench Before the Embedded SiGe Source/Drain Formation for 28-nm PMOSFET
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Super Graphene-Skinned Materials: An Innovative Strategy toward Graphene Applications
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Angle‐resolved XPS depth profiling of modeled structures: testing and improvement of the method
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Engineering electronic properties of layered transition-metal dichalcogenide compounds through alloying
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Alloyed 2D Metal–Semiconductor Atomic Layer Junctions
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