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30 积分 2021-12-23 加入
High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation
1天前
已完结
High-performance normally off AlGaN/GaN high electron mobility transistor with p-type h-BN cap layer
3个月前
已完结
Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN
3个月前
已完结
A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High I ON/I OFF Ratio
3个月前
已完结
Making clean electrical contacts on 2D transition metal dichalcogenides
6个月前
已完结
Epitaxial growth of quantum dots on van der Waals surfaces
6个月前
已完结
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