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亲爱的研友该休息了!由于当前在线用户较少,发布求助请尽量完整的填写文献信息,科研通机器人24小时在线,伴您度过漫漫科研夜!身体可是革命的本钱,早点休息,好梦!
细腻的靖巧
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170 积分
2024-07-17 加入
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The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density
11小时前
已完结
Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material
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Advanced approach of bulk (111) 3C-SiC epitaxial growth
1个月前
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Numerical Study on the Growth Rate of Silicon Carbide Single Crystals in a High Temperature Chemical Vapor Deposition System
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Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases
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Growth Features of 3C-SiC/Si Films Fabricated by HTCVD
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Synthesis and investigation of the physicochemical properties of polymorphic 3C–SiC
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Evidence of twin mediated growth in the CVD of polycrystalline silicon carbide
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Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane
1个月前
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Stressed State in the Vicinity of a Hole in Mechanical Joint of Composite Parts
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The Importance of Surface Oxygen for Lithiation and Morphology Evolution during Calcination of High‐Nickel NMC Cathodes
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上传文件是Pengaruh Slice Thickness terhadap Signal to Noise Ratio (SNR) dari Hasil Penyinaran CT Scan di RSUP Prof. Dr. I.G.N.G Ngoerah,所需文件是Advanced approach of bulk(111)3C-SiC epitaxial growth不一致
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